irg5k50p5k50pm06e IRG7U100HF12A 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 absolute maximum ratings of igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 100 a t c = 25c 200 a i cm pulse collector current t j = 175c 200 a p d maximum power dissipation (igbt) t c = 25c, t j = 175c 580 w t j maximum igbt junction temperature 175 c t jop maximum operating junction temperature range - 40 to +150 c t stg - 40 to +125 c storage temperature v ces = 1200v i c = 100a at t c = 80 ? c v ce(on) = 1.70v at i c = 100a igbt half - bridge pow ir 34 ? package features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 100% rbsoa tested rugged transient performance pow ir 34 ? package industry standard lead free rohs compliant, environmental friendly base part number package type standard pack quantity orderable part number IRG7U100HF12A pow ir 34 ? box 80 IRG7U100HF12A applications ? industrial motor drive ? uninterruptible power supply ? welding and cutting machine ? switched mode power supply ? induction heating ? ac inverter drive
irg5k50p5k50pm06e IRG7U100HF12A 2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 switching characteristics of igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 250 ns t j = 25c v cc =600v, i c = 100a, r g = 33?, v ge =15v, inductive load 250 t j = 125c t r rise time 125 ns t j = 25c 125 t j = 125c t d(off) turn - off delay time 600 ns t j = 25c 625 t j = 125c t f fall time 165 ns t j = 25c 185 t j = 125c e on turn - on switching loss 15.5 mj t j = 25c 16.3 t j = 125c e off turn - off switching loss 3.8 mj t j = 25c 6.1 t j = 125c q g total gate charge 685 nc t j = 25c c ies input capacitance 10.0 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.54 c res reverse transfer capacitance 0.38 rbsoa reverse bias safe operating area trapezoid i c = 200a,v cc = 960v, v p = 1200v, r g = 33?, v ge = +15v to 0v, t j = 150c electrical characteristics of igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 3.4 4.2 4.9 v i c = 5ma, v ce = v ge v ce(on) collector to emitter saturation voltage 1.70 2.00 v t j = 25c i c = 100a, v ge = 15v 1.90 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0v r gint internal gate resistance 2.5
irg5k50p5k50pm06e IRG7U100HF12A 3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 absolute maximum ratings of freewheeling diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 200 a diode continuous forward current, t c = 80c 100 i fm pulse diode current 200 a module characteristics min. typ. max. unit parameter v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v r jc junction - to - case (igbt) 0.26 c/w r jc junction - to - case (diode) 0.41 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w m power terminals screw: m5 3.0 5.0 nm m mounting screw: m6 4.0 6.0 nm g weight 165 g electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 2.20 v t j = 25c i f = 100a , v ge = 0v 2.70 2.40 t j = 125c i rr peak reverse recovery current 40 a t j = 25c i f 100a, di/dt=940a/ s, v rr = 600v, v ge = - 15v 60 t j = 125c q rr reverse recovery charge 3.2 c t j = 25c 7.6 t j = 125c e rec reverse recovery energy 0.8 mj t j = 25c 2.3 t j = 125c
irg5k50p5k50pm06e IRG7U100HF12A 4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 fig.1 typical igbt saturation characteristics fig.2 typical igbt output characteristics fig.3 typical diode forward characteristics fig. 4 typical capacitance characteristics fig.5 typical switching loss vs. collector current fig.6 typical switching loss vs. gate resistance 0 20 40 60 80 100 120 140 160 180 200 0.0 0.6 1.2 1.8 2.4 3.0 3.6 v ce (v) i c (a) v ge =15v t j =125 c t j =25 c 0 20 40 60 80 100 120 140 160 180 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ce (v) i c (a) t j =125 c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 22 c (nf) v ce (v) v ge =0v, f =1 mhz c ies c oes 0 20 40 60 80 100 120 140 160 180 200 0 3 6 9 12 15 18 21 24 27 30 e (mj) i c (a) v cc =600v,v ge =+/-15v, rg =33 ohm,t j =125 c e off e on e rec 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 14 16 18 20 22 e (mj) rg ( ? ) v cc =600v,v ge =+/-15v, i c =100a ,t j =125 c e off e on e rec 0 20 40 60 80 100 120 140 160 180 200 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 v f (v) i f (a) v ge =0v t j =125 c t j =25 c
irg5k50p5k50pm06e IRG7U100HF12A 5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 fig.7 typical load current vs. frequency fig.8 reverse bias safe operation area (rbsoa) fig.9 typical transient thermal impedance (igbt) fig.10 typical transient thermal impedance (diode) 0.001 0.01 0.1 1 3 0.0 0.1 0.2 0.3 0.4 0.5 z thjc (k/w) t (s) z thjc :diode 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 0.4 z thjc (k/w) t ( s ) z thjc :igbt 0 20 40 60 80 100 120 140 160 180 1 10 100 duty cycle:50% t j =125 c t c =80 c rg =33 ohm,v ge =15v frequency (khz) load current (a) square wave: diode as specified v cc i 0 200 400 600 800 1000 1200 0 50 100 150 200 i c (a) v ces (v) module chip
irg5k50p5k50pm06e IRG7U100HF12A 6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1 , 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/
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